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| PD - 9.1032 IRGPC30U INSULATED GATE BIPOLAR TRANSISTOR Features * Switching-loss rating includes all "tail" losses * Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve G E C UltraFast IGBT VCES = 600V VCE(sat) 3.0V @VGE = 15V, IC = 12A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM VGE EARV PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. 600 23 12 92 92 20 10 100 42 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1N*m) Units V A V mJ W C Thermal Resistance Parameter RJC RCS RJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. -- -- -- -- Typ. -- 0.24 -- 6 (0.21) Max. 1.2 -- 40 -- Units C/W g (oz) IRGPC30U Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)CES V(BR)ECS V(BR)CES/T J VCE(on) VGE(th) VGE(th)/TJ gfe ICES IGES Parameter Min. Typ. Max. Units Collector-to-Emitter Breakdown Voltage 600 -- -- V Emitter-to-Collector Breakdown Voltage 20 -- -- V Temperature Coeff. of Breakdown Voltage -- 0.63 -- V/C Collector-to-Emitter Saturation Voltage -- 2.2 3.0 -- 2.7 -- V -- 2.4 -- Gate Threshold Voltage 3.0 -- 5.5 Temperature Coeff. of Threshold Voltage -- -11 -- mV/C Forward Transconductance 3.1 8.6 -- S Zero Gate Voltage Collector Current -- -- 250 A -- -- 1000 Gate-to-Emitter Leakage Current -- -- 100 nA Conditions VGE = 0V, IC = 250A VGE = 0V, IC = 1.0A VGE = 0V, IC = 1.0mA IC = 12A VGE = 15V See Fig. 2, 5 IC = 23A IC = 12A, TJ = 150C VCE = VGE, IC = 250A VCE = VGE, IC = 250A VCE = 100V, IC = 12A VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 150C VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. Max. Units Conditions 29 36 IC = 12A 4.8 6.8 nC VCC = 400V See Fig. 8 12 17 VGE = 15V 24 -- TJ = 25C 15 -- ns IC = 12A, VCC = 480V 92 200 VGE = 15V, RG = 23 93 190 Energy losses include "tail" 0.18 -- 0.35 -- mJ See Fig. 9, 10, 11, 14 0.53 1.0 24 -- TJ = 150C, 15 -- ns IC = 12A, VCC = 480V 160 -- VGE = 15V, RG = 23 200 -- Energy losses include "tail" 0.90 -- mJ See Fig. 10, 14 13 -- nH Measured 5mm from package 660 -- VGE = 0V 100 -- pF VCC = 30V See Fig. 7 11 -- = 1.0MHz Notes: Repetitive rating; VGE=20V, pulse width limited by max. junction temperature. ( See fig. 13b ) Repetitive rating; pulse width limited by maximum junction temperature. Pulse width 5.0s, single shot. VCC=80%(VCES), VGE=20V, L=10H, RG= 23, ( See fig. 13a ) Pulse width 80s; duty factor 0.1%. IRGPC30U Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=IRMS of fundamental; for triangular wave, I=I PK) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics IRGPC30U . g i F Case Temperature . sv t ne r r uFg r5 t ce lCleC rtmmta - Vlae C . o - ollco-u EiitM ot m- x e o r otg i Cs ae Tmeaue eprtr 4s v. Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case IRGPC30U i. F g 7 - Typical Capacitance vs. Collector-to-Emitter Voltage i. F g 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage i. F g 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Case Temperature IRGPC30U Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA IRGPC30U R= L 0 - 480V 480V 4 g3 i1 F Load Test Circuit ev i t cudn I d e pma l 13b--Pulsed Collector Fig. C Current Test Circuit .a g4 i1 F Test Circuit * Driver same type as D.U.T., VC = 480V s soL g n i h c t i wS . b g 4 i 1 F Waveforms ssoL gn i hc t i wS |
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